- Part Number
- APTGT50A1202G
- Manufacturer
- Microsemi Corporation
- Category
- IGBT Modules
- Package
- Bulk
- RoHS
- Compliant
Specifications
- Part Status Obsolete
- Mounting Type Chassis Mount
- Voltage - Collector Emitter Breakdown (Max) 1200 V
- Operating Temperature -40°C ~ 150°C (TJ)
- Configuration Half Bridge
- Input Standard
- NTC Thermistor No
- Current - Collector (Ic) (Max) 75 A
- IGBT Type Trench Field Stop
- Current - Collector Cutoff (Max) 50 µA
- Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
- Input Capacitance (Cies) @ Vce 3.6 nF @ 25 V
- Power - Max 277 W
- Package / Case SP2
- Supplier Device Package SP2
