- Part Number
- GT10J312(Q)
- Manufacturer
- Toshiba Semiconductor and Storage
- Category
- Single IGBTs
- Package
- Tube
- RoHS
- Compliant
- Datasheet
- Download
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- Supplier Device Package -
- Reverse Recovery Time (trr) 200 ns
- Operating Temperature 150°C (TJ)
- IGBT Type -
- Voltage - Collector Emitter Breakdown (Max) 600 V
- Input Type Standard
- Power - Max 60 W
- Switching Energy -
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
- Current - Collector (Ic) (Max) 10 A
- Current - Collector Pulsed (Icm) 20 A
- Td (on/off) @ 25°C 400ns/400ns
- Test Condition 300V, 10A, 100Ohm, 15V
