- Part Number
- GT40QR21(STA1,E,D
- Manufacturer
- Toshiba Semiconductor and Storage
- Category
- Single IGBTs
- Package
- Tube
- RoHS
- Compliant
- Datasheet
- Download
Specifications
- Mounting Type Through Hole
- Part Status Active
- IGBT Type -
- Current - Collector (Ic) (Max) 40 A
- Input Type Standard
- Voltage - Collector Emitter Breakdown (Max) 1200 V
- Package / Case TO-3P-3, SC-65-3
- Td (on/off) @ 25°C -
- Operating Temperature 175°C (TJ)
- Power - Max 230 W
- Current - Collector Pulsed (Icm) 80 A
- Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 40A
- Supplier Device Package TO-3P(N)
- Reverse Recovery Time (trr) 600 ns
- Test Condition 280V, 40A, 10Ohm, 20V
- Switching Energy -, 290µJ (off)
