- Part Number
- GT50N322A
- Manufacturer
- Toshiba Semiconductor and Storage
- Category
- Single IGBTs
- Package
- Tray
- RoHS
- Compliant
- Datasheet
- Download
Specifications
- Mounting Type Through Hole
- Part Status Active
- Operating Temperature 150°C (TJ)
- IGBT Type -
- Input Type Standard
- Current - Collector (Ic) (Max) 50 A
- Test Condition -
- Package / Case TO-3P-3, SC-65-3
- Switching Energy -
- Td (on/off) @ 25°C -
- Current - Collector Pulsed (Icm) 120 A
- Voltage - Collector Emitter Breakdown (Max) 1000 V
- Power - Max 156 W
- Supplier Device Package TO-3P(N)
- Reverse Recovery Time (trr) 800 ns
- Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
