- Part Number
- GT60N321(Q)
- Manufacturer
- Toshiba Semiconductor and Storage
- Category
- Single IGBTs
- Package
- Tube
- RoHS
- Compliant
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- IGBT Type -
- Input Type Standard
- Test Condition -
- Reverse Recovery Time (trr) 2.5 µs
- Switching Energy -
- Current - Collector (Ic) (Max) 60 A
- Current - Collector Pulsed (Icm) 120 A
- Voltage - Collector Emitter Breakdown (Max) 1000 V
- Power - Max 170 W
- Package / Case TO-3PL
- Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
- Td (on/off) @ 25°C 330ns/700ns
- Supplier Device Package TO-3P(LH)
