- مدل
- GT30J65MRB,S1E
- تولیدکننده
- Toshiba Semiconductor and Storage
- دستهبندی
- IGBTهای تکی
- کپسولهسازی
- Tube
- RoHS
- مطابق
- برگه داده
- دانلود
مشخصات فنی
- Mounting Type Through Hole
- Part Status Active
- Reverse Recovery Time (trr) 200 ns
- IGBT Type -
- Input Type Standard
- Power - Max 200 W
- Package / Case TO-3P-3, SC-65-3
- Current - Collector (Ic) (Max) 60 A
- Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A
- Operating Temperature 175°C (TJ)
- Gate Charge 70 nC
- Supplier Device Package TO-3P(N)
- Voltage - Collector Emitter Breakdown (Max) 650 V
- Switching Energy 1.4mJ (on), 220µJ (off)
- Td (on/off) @ 25°C 75ns/400ns
- Test Condition 400V, 15A, 56Ohm, 15V
