- مدل
- GT50J121(Q)
- تولیدکننده
- Toshiba Semiconductor and Storage
- دستهبندی
- IGBTهای تکی
- کپسولهسازی
- Tube
- RoHS
- مطابق
مشخصات فنی
- Part Status Obsolete
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- IGBT Type -
- Voltage - Collector Emitter Breakdown (Max) 600 V
- Input Type Standard
- Current - Collector (Ic) (Max) 50 A
- Current - Collector Pulsed (Icm) 100 A
- Package / Case TO-3PL
- Power - Max 240 W
- Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A
- Supplier Device Package TO-3P(LH)
- Td (on/off) @ 25°C 90ns/300ns
- Switching Energy 1.3mJ (on), 1.34mJ (off)
- Test Condition 300V, 50A, 13Ohm, 15V
