- مدل
- GT50JR21(STA1,E,S)
- تولیدکننده
- Toshiba Semiconductor and Storage
- دستهبندی
- IGBTهای تکی
- کپسولهسازی
- Tube
- RoHS
- مطابق
- برگه داده
- دانلود
مشخصات فنی
- Mounting Type Through Hole
- Part Status Active
- IGBT Type -
- Voltage - Collector Emitter Breakdown (Max) 600 V
- Input Type Standard
- Current - Collector (Ic) (Max) 50 A
- Test Condition -
- Package / Case TO-3P-3, SC-65-3
- Switching Energy -
- Td (on/off) @ 25°C -
- Current - Collector Pulsed (Icm) 100 A
- Operating Temperature 175°C (TJ)
- Power - Max 230 W
- Supplier Device Package TO-3P(N)
- Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
