- דגם
- GH50H65DRB2-7AG
- יצרן
- STMicroelectronics
- קטגוריה
- Single IGBTs
- אריזה
- Bulk
- RoHS
- מתאים
- גיליון נתונים
- הורד
מפרטים
- Part Status Active
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Input Type Standard
- Current - Collector Pulsed (Icm) 200 A
- Voltage - Collector Emitter Breakdown (Max) 650 V
- IGBT Type Trench Field Stop
- Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
- Test Condition 400V, 50A, 4.7Ohm, 15V
- Power - Max 385 W
- Current - Collector (Ic) (Max) 108 A
- Supplier Device Package H2PAK-7
- Gate Charge 152 nC
- Switching Energy 557µJ (off)
- Td (on/off) @ 25°C -/117ns
- Reverse Recovery Time (trr) 912 ns
