- דגם
- MIB20N65AT0Y-TP
- קטגוריה
- Single IGBTs
- אריזה
- Tape & Reel (TR)
- RoHS
- מתאים
- גיליון נתונים
- הורד
מפרטים
- Part Status Active
- Mounting Type Surface Mount
- Grade -
- Qualification -
- Reverse Recovery Time (trr) 200 ns
- Current - Collector (Ic) (Max) 40 A
- Input Type Standard
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package D2PAK
- Current - Collector Pulsed (Icm) 60 A
- Operating Temperature -40°C ~ 175°C (TJ)
- Gate Charge 85 nC
- Voltage - Collector Emitter Breakdown (Max) 650 V
- Power - Max 120 W
- IGBT Type Trench Field Stop
- Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 20A
- Switching Energy 410µJ (on), 220µJ (off)
- Td (on/off) @ 25°C 12ns/68ns
- Test Condition 300V, 20A, 51Ohm, 15V