- דגם
- MIP50R12E2TN-BP
- קטגוריה
- IGBT Modules
- אריזה
- Tape & Reel (TR)
- RoHS
- מתאים
מפרטים
- Part Status Active
- Mounting Type Chassis Mount
- Supplier Device Package -
- Package / Case Module
- IGBT Type -
- Voltage - Collector Emitter Breakdown (Max) 1200 V
- Operating Temperature -40°C ~ 150°C (TJ)
- Current - Collector Cutoff (Max) 1 mA
- Configuration Three Phase Inverter
- Input Three Phase Bridge Rectifier
- NTC Thermistor Yes
- Current - Collector (Ic) (Max) 35 A
- Power - Max 227 W
- Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 35A
- Input Capacitance (Cies) @ Vce 2000 pF @ 25 V
