- דגם
- NXH200T120H3Q2F2STG
- יצרן
- onsemi
- קטגוריה
- IGBT Modules
- אריזה
- Tray
- RoHS
- מתאים
- גיליון נתונים
- הורד
מפרטים
- Part Status Active
- Mounting Type Chassis Mount
- Package / Case Module
- Voltage - Collector Emitter Breakdown (Max) 1200 V
- Configuration Half Bridge
- Input Standard
- NTC Thermistor No
- Operating Temperature -40°C ~ 175°C (TJ)
- Current - Collector Cutoff (Max) 500 µA
- IGBT Type Trench Field Stop
- Current - Collector (Ic) (Max) 330 A
- Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 200A
- Supplier Device Package 56-PIM/Q2PACK (93x47)
- Power - Max 679 W
- Input Capacitance (Cies) @ Vce 35.615 nF @ 25 V
