- דגם
- RGE80TS65DGC13
- יצרן
- ROHM Semiconductor
- קטגוריה
- Single IGBTs
- אריזה
- Tape & Reel (TR)
- RoHS
- מתאים
מפרטים
- Mounting Type Through Hole
- Part Status Active
- Grade -
- Qualification -
- Package / Case TO-247-3
- Input Type Standard
- Power - Max 200 W
- Current - Collector Pulsed (Icm) 120 A
- Operating Temperature -40°C ~ 175°C (TJ)
- Gate Charge 85 nC
- Current - Collector (Ic) (Max) 63 A
- Voltage - Collector Emitter Breakdown (Max) 650 V
- IGBT Type Trench Field Stop
- Test Condition 400V, 40A, 10Ohm, 15V
- Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 40A
- Supplier Device Package TO-247GE
- Switching Energy 1.09mJ (on), 780µJ (off)
- Td (on/off) @ 25°C 49ns/131ns
- Reverse Recovery Time (trr) 183 ns
