- דגם
- WG50N65DHWQ
- יצרן
- WeEn Semiconductors
- קטגוריה
- Single IGBTs
- אריזה
- Tube
- RoHS
- מתאים
מפרטים
- Mounting Type Through Hole
- Part Status Active
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-247-3
- Input Type Standard
- Current - Collector Pulsed (Icm) 200 A
- Gate Charge 160 nC
- Supplier Device Package TO-247-3
- Reverse Recovery Time (trr) 105 ns
- Voltage - Collector Emitter Breakdown (Max) 650 V
- IGBT Type Trench Field Stop
- Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
- Power - Max 278 W
- Test Condition 400V, 50A, 10Ohm, 15V
- Current - Collector (Ic) (Max) 91 A
- Switching Energy 1.7mJ (on), 600µJ (off)
- Td (on/off) @ 25°C 66ns/163ns
